Fine structure splitting of isoelectronic bound excitons in nitrogen-doped GaAs

Hydrostatic pressure dependence of isoelectronic bound excitons in beryllium-doped silicon.

Photoluminescence ~PL! from the recombination of excitons bound to isoelectronic Be2 dopants in bulk silicon is measured for pressures up to 60 kbar and temperatures down to 9 K. PL from excitons bound to this Be2 trap is analyzed by using the Hopfield-Thomas-Lynch model, extended to treat more complex isoelectronic dopants, and several different binding potentials. This modified model describe...

Spin dynamics of isoelectronic bound excitons in ZnO

Fine structure of trions and excitons in single GaAs quantum dots

Although the negatively charged trion in semiconductors was originally predicted in 1958 by Lampert, a proper identification of the X was not achieved until the early 1990s in remotely doped high-quality quantum-well ~QW! structures. Since then, extensive work has been carried out on the two-dimensional ~2D! X in wide quantum wells, and more recently on the 0D X in QD’s. In many of these studie...

Polarization-resolved fine-structure splitting of zero-dimensional InxGa1-xN excitons

Magneto-optical properties and recombination dynamics of isoelectronic bound excitons in ZnO

Magneto-optical and time-resolved photoluminescence (PL) spectroscopies are employed to evaluate electronic structure of a bound exciton (BX) responsible for the 3.364 eV line (labeled as I1) in bulk ZnO. From timeresolved PL spectroscopy, I1 is concluded to originate from the exciton ground state. Based on performed magneto-PL studies, the g-factors of the involved electron and hole are determ...